High-quality GaAs quantum dots grown using a modified droplet epitaxy technique

Journal of the Korean Physical Society

Volumn 38, Issue 1, 2001, Pages 25-28

  Watanabe, K ^c   Koguchi, N ^c   Ishige, K ^a   Lee, C D ^b   Leem, J Y ^b   Lee, H J ^b   Noh, S K ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Korea Research Institute of Standards and Science   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035219262     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

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