Zinc blende GaN grown by radio frequency plasma assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 125-128

  Cho, H D ^a   Ko, N H ^a   Park, S H ^a   Kang, T W ^a   Han, J W ^b   Eom, K S ^c   Won, S H ^d   Jung, K S ^d  

^a Dongguk University   (South Korea)

^b Sejong University   (South Korea)

^c Uiduk University   (South Korea)

^d Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; NITRIDING; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; ZINCBLENDE;

SEMICONDUCTING FILMS;

EID: 0031141018     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00864-0     Document Type: Article

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