Determination of the effect of processing steps on the CMOS compatibility of a surface micromachined pressure sensor

Journal of Micromechanics and Microengineering

Volumn 11, Issue 4, 2001, Pages 402-408

  Berney, H ^a   Hill, M ^a   Cotter, D ^a   Hynes, E ^b   O'Neill, M ^b   Lane, W A ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b ANALOG DEVICES   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; FABRICATION; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; POLYSILICON; PRESSURE EFFECTS; RESIDUAL STRESSES; SILICON SENSORS;

PRESSURE SENSORS;

FIELD EFFECT TRANSISTORS;

EID: 0035396843     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/11/4/321     Document Type: Article

References (14)

1. Materials issues in microelectromechanical systems (MEMS)
2. Development and characterisation of a surface micromachined FET pressure sensor on a CMOS process
3. Development of a FET Pressure Sensor Model and use to predict sensor behaviours as a function of electrode geometry