Development and characterization of a surface micromachined FET pressure sensor on a CMOS process

Sensors and Actuators, A: Physical

Volumn 76, Issue 1-3, 1999, Pages 283-292

  Hynes, E ^a   O'Neill, M ^a   McAuliffe, D ^a   Berney, H ^b   Lane, W A ^b   Kelly, G ^b   Hill, M ^b  

^a ANALOG DEVICES   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; FINITE ELEMENT METHOD; MICROELECTROMECHANICAL DEVICES; PARTIAL PRESSURE SENSORS; SEMICONDUCTING SILICON;

POLYSILICON; PRESSURE SENSOR;

MICROSENSORS;

EID: 0343932621     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00058-8     Document Type: Article

References (5)

1. Voorthuyzen J.A., Bergveld P. The PRESSFET: an integrated electret-MOSFET based pressure sensor. Sensors and Actuators. 14:1988;349-360.
2. Suminto J.T., Kho W.H. Pressure-sensitive insulated gate field-effect transistor (PSIGFET). Sensors and Actuators. A21-A23:1990;126-132.
3. J.M. Lysko, R.S. Jachowicz, M.A. Krzycki, Semiconductor pressure sensor based on FET structure, Proc. of IEEE Instrumentation and Measurement Technology Conference, 1994, pp. 1233-1236.
4. Svensson L., Plaza J.A., Benitez M.A., Esteve J., Lora-Tamayo E. Surface micromachining technology applied to the fabrication of a FET pressure sensor. J. Micromech. Microeng. 6:1996;80-83.
5. S. Timoshenko, Theory of Plates and Shells, McGraw-Hill, New York, 1940.