High-gain quantum-dot infrared photodetector

Infrared Physics and Technology

Volumn 42, Issue 3-5, 2001, Pages 467-472

  Mitin, V V ^a   Pipa, V I ^a,b   Sergeev, A V ^a   Dutta, M ^c   Stroscio, M ^c  

^a Wayne State University   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

Capture; Photodetector; Potential barrier; Quantum dot

Indexed keywords

CONTINUUM MECHANICS; GROUND STATE; PHOTOSENSITIVITY; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

INTERDOT DOPING; POTENTIAL BARRIERS; QUANTUM-DOT INFRARED PHOTODETECTORS;

INFRARED DETECTORS;

EID: 0035368493     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4495(01)00107-4     Document Type: Article

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