Carrier dynamics in high-speed (f-3 dB > 40 GHz) 0.98-μm multiquantum-well tunneling injection lasers determined from electrical impedance measurements

IEEE Photonics Technology Letters

Volumn 9, Issue 5, 1997, Pages 578-580

  Klotzkin, D ^a   Zhang, X ^a   Bhattacharya, P ^a   Caneau, C ^b   Bhat, R ^b  

^a University of Michigan   (United States)

^b TELCORDIA TECHNOLOGIES   (United States)

Author keywords

Semiconductor lasers

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC IMPEDANCE; ELECTRIC IMPEDANCE MEASUREMENT; ELECTRON TUNNELING; OPTICAL PUMPING; PROBES; QUANTUM WELL LASERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

CARRIER LIFETIMES; MULTIQUANTUM WELL (MQW) TUNNELING INJECTION LASERS; RIDGE WAVEGUIDE LASERS;

INJECTION LASERS;

EID: 0031143343     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.588116     Document Type: Article

References (11)

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