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Volumn 19, Issue 9, 1998, Pages 343-344

Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films

Author keywords

[No Author keywords available]

Indexed keywords

LASER APPLICATIONS; LOW TEMPERATURE EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032162936     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.709637     Document Type: Article
Times cited : (13)

References (12)
  • 1
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    • G. K. Giust and T. W. Sigmon, "Self-aligned aluminum top-gate polysilicon thin-film transistors fabricated using laser recrystallization and gas-immersion laser doping," IEEE Electron Device Lett., vol. 18, pp. 394-396, Aug. 1997.
    • (1997) IEEE Electron Device Lett. , vol.18 , pp. 394-396
    • Giust, G.K.1    Sigmon, T.W.2
  • 2
    • 0028369836 scopus 로고
    • Laser dehydrogenation/crystallization of plasma-enhanced chemical vapor deposited amorphous silicon for hybrid thin-film transistors
    • P. Mei, J. B. Boyce, M. Hack, R. A. Lujan, R. I. Johnson, G. B. Anderson, D. K. Fork, and S. E. Ready, "Laser dehydrogenation/crystallization of plasma-enhanced chemical vapor deposited amorphous silicon for hybrid thin-film transistors," Appl. Phys. Lett., vol. 64, pp. 1132-1143, 1994.
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 1132-1143
    • Mei, P.1    Boyce, J.B.2    Hack, M.3    Lujan, R.A.4    Johnson, R.I.5    Anderson, G.B.6    Fork, D.K.7    Ready, S.E.8
  • 3
    • 0024908311 scopus 로고
    • High-performance TFT's fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film
    • Dec.
    • K. Sera, F. Okumura, H. Uchida, S. Itoh, S. Kaneko, and K. Hotta, "High-performance TFT's fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film," IEEE Trans. Electron Devices, vol. 36, pp. 2868-2872, Dec. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 2868-2872
    • Sera, K.1    Okumura, F.2    Uchida, H.3    Itoh, S.4    Kaneko, S.5    Hotta, K.6
  • 4
    • 0024733223 scopus 로고
    • Low-temperature fabrication of high-mobility poly-Si TFT's for large-area LCD's
    • Sept.
    • T. Serikawa, S. Shirai, A. Okamoto, and S. Suyama, "Low-temperature fabrication of high-mobility poly-Si TFT's for large-area LCD's," IEEE Trans. Electron Devices, vol. 36, pp. 1929-1933, Sept. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1929-1933
    • Serikawa, T.1    Shirai, S.2    Okamoto, A.3    Suyama, S.4
  • 5
    • 0026817614 scopus 로고
    • Electrical analysis of high-mobility poly Si TFT's made from laser-irradiated sputtered Si films
    • Feb.
    • S. Shirai and T. Serikawa, "Electrical analysis of high-mobility poly Si TFT's made from laser-irradiated sputtered Si films," IEEE Trans. Electron Devices, vol. 39, pp. 450-452, Feb. 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 450-452
    • Shirai, S.1    Serikawa, T.2
  • 6
    • 0027578840 scopus 로고
    • Current characteristics of polycrystalline thin-film transistors using sputtered silicon films
    • K. Y. Tong and E. V. Jelenkovic, "Current characteristics of polycrystalline thin-film transistors using sputtered silicon films," Solid-State Electron., vol. 36, no. 4, pp. 513-517, 1993.
    • (1993) Solid-State Electron. , vol.36 , Issue.4 , pp. 513-517
    • Tong, K.Y.1    Jelenkovic, E.V.2
  • 8
    • 0022753993 scopus 로고
    • Fabrication of submicrometer MOSFET's using gas-immersion laser doping (GILD)
    • P. G. Carey, K. Bezjian, T. W. Sigmon, P. Gildea, and T. J. Magee, "Fabrication of submicrometer MOSFET's using gas-immersion laser doping (GILD)," IEEE Electron Device Lett., vol. EDL-7, pp. 440-442, 1986.
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , pp. 440-442
    • Carey, P.G.1    Bezjian, K.2    Sigmon, T.W.3    Gildea, P.4    Magee, T.J.5
  • 9
    • 0028409580 scopus 로고
    • On the super-lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si films
    • J. S. Im and H. J. Kim, "On the super-lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si films," Appl. Phys. Lett., vol. 64, no. 17, pp. 2303-2305, 1994.
    • (1994) Appl. Phys. Lett. , vol.64 , Issue.17 , pp. 2303-2305
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  • 10
    • 0347960086 scopus 로고    scopus 로고
    • High-performance thin-film transistors fabricated using excimer laser processing and grain engineering
    • Apr.
    • G. K. Giust and T. W. Sigmon, "High-performance thin-film transistors fabricated using excimer laser processing and grain engineering," IEEE Trans. Electron Devices, vol. 45, pp. 925-932, Apr. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 925-932
    • Giust, G.K.1    Sigmon, T.W.2
  • 12
    • 84949077617 scopus 로고
    • Leakage current mechanisms in hydrogenated-passivated fine-grain polycrystalline silicon on insulator MOSFET's
    • Oct.
    • S. K. Madan and D. A. Antoniadis, "Leakage current mechanisms in hydrogenated-passivated fine-grain polycrystalline silicon on insulator MOSFET's," IEEE Trans. Electron Devices, vol. ED-33, pp. 1518-1528, Oct. 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 1518-1528
    • Madan, S.K.1    Antoniadis, D.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.