Absorption of infrared radiation by free charge carriers in n-type Cd1-xZnxTe

Semiconductors

Volumn 33, Issue 5, 1999, Pages 514-517

  Belogorokhov, A I ^a   Belov, A G ^a   Lakeenkov, V M ^a   Smirnova, N A ^a   Belogorokhova, L I ^b  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033131605     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187890     Document Type: Article

References (8)

1. T. Moss, H. Barrel, and B. Ellis, Semiconductor Optoelectronics [Mir, Moscow, 1976, pp. 27, 45, and 51].
2. B. M. Askerov, Kinetic Effects in Semiconductors (Nauka, Leningrad, 1970), p. 39.
3. M. Cardona, J. Phys. Chem. Solids 24(4), 1543 (1963).
4. M. J. S. H. Brasil, M. C. Tamargo, R. E. Nahory, H. L. Gilchrist, and R. J. Martin, Appl. Phys. Lett. 59(10), 1206 (1991).
5. N. N. Berchenko, V. E. Krevs, and V. G. Sredin, Semiconductor Solid Solutions and Their Applications (Voenizdat, Moscow, 1982), p. 73.
6. J. Baars and F. Sorger, Solid State Commun. 10(9), 875 (1972).
7. W. J. Kim, M. J. Park, S. U. Kim, T. S. Lee, J. M. Kim, W. J. Song, and S. H. Suh, J. Cryst. Growth 104(3), 677 (1990).
8. B. Li, J. Zhu, X. Zhang, and J. Chu, J. Cryst. Growth 181, 204 (1997).