Crystalline si films grown epitaxially at low temperatures by ecr-pecvd

Materials Research Society Symposium - Proceedings

Volumn 609, Issue , 2000, Pages A861-A866

  Platen, J ^a   Selle, B ^a   Christiansen, S ^a,b   Nerding, M ^a,b   Schmidbauer, M ^a,c   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; ETCHING; ION BOMBARDMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE ROUGHNESS; THERMAL EFFECTS;

CRYSTALLINE FILMS;

SILICON WAFERS;

EID: 0034431139     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-609-a8.6     Document Type: Article

References (15)