Crystal growth of high quality hybrid GaAs heteroepitaxial layers on Si substrate by metalorganic chemical vapor deposition and liquid phase epitaxy

Journal of Crystal Growth

Volumn 192, Issue 1-2, 1998, Pages 23-27

  Saravanan, S ^d   Jeganathan, K ^a   Baskar, K ^b   Jimbo, T ^a,c   Soga, T ^c   Umeno, M ^c  

^a ANNA UNIVERSITY   (India)

^b Electron Devices Division   (Japan)

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^d NONE

Author keywords

FWHM; Heteroepitaxial; Hybrid; LPE; MOCVD

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SOLVENTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTALLINITY; DISLOCATION DENSITY; ETCH PIT DENSITY; FULL WIDTH HALF MAXIMUM; HETEROEPITAXIAL LAYER; STARTING GROWTH TEMPERATURE;

LIQUID PHASE EPITAXY;

EID: 0032474985     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00409-6     Document Type: Article

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