Stress reduction and structural quality improvement due to In doping in GaAs/Si

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 68, Issue 3, 2000, Pages 166-170

  Saravanan, S ^a   Adachi, M ^a   Satoh, N ^a   Soga, T ^a   Jimbo, T ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BEAM EPITAXY; CRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STRESS ANALYSIS; SURFACE ROUGHNESS; TENSILE STRESS;

AVERAGE ROUGHNESS (RA); ROOT MEAN SQUARE (RMS) ROUGHNESS;

SEMICONDUCTING FILMS;

EID: 0033886942     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00476-6     Document Type: Article

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