The impact of Fe and Cu contamination in the 1012 at/cm2 range on the performance of junction diodes

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 397-402

  Rotondaro, A L P ^a   Vandamme, E ^a   Vanhellemont, J ^a   Simoen, E ^a   Heyns, M M ^a   Claeys, C ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; COPPER; DEFECTS; IRON; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

CONTAMINATION LEVELS; FABRICATION PROCESS; GOOD CORRELATIONS; IV CHARACTERISTICS; LOW-LEAKAGE CURRENT; PERIPHERAL COMPONENTS; PHOTOCONDUCTANCE; RECOMBINATION LIFETIME;

SEMICONDUCTOR DIODES;

EID: 17544364734     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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