Copper contamination effect on the reliability of devices in the BiCMOS technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3883, Issue , 1999, Pages 24-33

  Low, Kia Seng ^a   Schwerd, Markus ^a   Koerner, Heinrich ^a   Barth, Hans Joachim ^a   O'Neill, Anthony ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CMOS INTEGRATED CIRCUITS; CONTAMINATION; DECOMPOSITION; DIFFUSION; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE OPERATIONS; OXYGEN; PRECIPITATION (CHEMICAL); SURFACES;

ATOMIC ABSORPTION SPECTROSCOPY; GUMMEL PLOT MEASUREMENT; INTERNAL GETTERING; SIMULATED DRIVE IN DIFFUSION; VAPOR PHASE DECOMPOSITION; WAFER;

COPPER;

EID: 0033336606     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.360578     Document Type: Conference Paper

References (26)