|
|
|
Volumn , Issue , 1999, Pages 129-130
|
|
Re-distribution of Cu contamination in advanced high-speed CMOS and its influence on device characteristics
a
a
HITACHI LTD
(Japan)
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ANNEALING;
BORON;
CARRIER CONCENTRATION;
COPPER;
CRYSTAL DEFECTS;
DIFFUSION IN SOLIDS;
DOPING (ADDITIVES);
FLUORESCENCE;
MOS DEVICES;
REFLECTION;
SILICON WAFERS;
BULK MICRO DEFECT DENSITY;
COPPER CONTAMINATION;
GETTERING EFFICIENCY;
OPTICAL PRECIPITATES PROFILER;
POLY SILICON BACK COATING;
TOTAL REFLECTION OF X RAY FLUORESCENCE;
SEMICONDUCTOR DEVICE MANUFACTURE;
|
|
EID: 0033279992
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
|
Times cited : (4)
|
|
References (5)
|
