A novel FET-type ferroelectric memory with excellent data retention characteristics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 317-320

  Yoon, S M ^a   Ishiwara, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; HYSTERESIS; MOS CAPACITORS; MOSFET DEVICES; POLARIZATION;

FERROELECTRIC MEMORY CELLS;

DATA STORAGE EQUIPMENT;

EID: 0034448943     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A single-transistor ferroelectric memory cell
2. Non-volatile FCG memory cell with non-destructive read-out operation
3. 6/SiON/Si structure
4. Proposal of a novel ferroelectric-gate field effect transistor with separated functions for data read-out and data storage
5. 2/Si structure field effect transistor as a synapse device