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Semiconductor Science and Technology

Volumn 16, Issue 5, 2001, Pages 413-419

MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source

(6) Zhukov, A E a Zhao, R b Specht, P b Ustinov, V M a Anders, A c Weber, E R b

a IOFFE INSTITUTE (Russian Federation)

b UNIVERSITY OF CALIFORNIA (United States)

c LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITROGEN; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTING INDIUM COMPOUNDS;

CRYSTALLINE QUALITY; INDIUM GALLIUM ARSENIC NITRIDE; PLASMA DISCHARGE CURRENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035327011 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/5/323 Document Type: Article

Times cited : (4)

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