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Semiconductor Science and Technology

Volumn 16, Issue 5, 2001, Pages 386-393

Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs

(4) Fletcher, R a Pudalov, V M b Radcliffe, A D B a Possanzini, C c

a QUEEN S UNIVERSITY (Canada)

b LEBEDEV PHYSICAL INSTITUTE (Russian Federation)

c RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON GAS; MOSFET DEVICES; SEMICONDUCTING SILICON; TEMPERATURE;

ANDERSON TRANSITION; THERMOPOWER;

METAL INSULATOR TRANSITION;

EID: 0035326603 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/5/318 Document Type: Article

Times cited : (31)

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