Experimental evidence of the Coulomb gap in a high-mobility 2D electron system in silicon

Surface Science

Volumn 361-362, Issue , 1996, Pages 953-956

  Mason, W ^b   Kravchenko, S V ^a,b   Furneaux, J E ^b  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b UNIVERSITY OF OKLAHOMA   (United States)

Author keywords

Electrical transport; Metal oxide semiconductor (MOS) structures; Silicon

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

COULOMB GAP; COULOMB INTERACTION; ELECTRICAL TRANSPORT; HIGH MOBILITY TWO DIMENSIONAL ELECTRON SYSTEM; METAL OXIDE SEMICONDUCTOR STRUCTURES; ZERO MAGNETIC FIELDS;

ELECTRON TRANSPORT PROPERTIES;

EID: 0030190140     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00572-9     Document Type: Article

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