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Volumn 77, Issue 16, 1996, Pages 3395-3398
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Electronic transport processes in heavily doped uncompensated and compensated silicon as probed by the thermoelectric power
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
ELECTRIC CONDUCTIVITY MEASUREMENT;
ELECTRON SCATTERING;
ELECTRON TRANSPORT PROPERTIES;
ENERGY GAP;
PHOSPHORUS;
SEMICONDUCTOR DOPING;
THERMAL EFFECTS;
THERMOELECTRICITY;
ACTIVATED TRANSPORT PROCESS;
ELECTRON-ELECTRON INTERACTIONS;
HUBBARD BAND SPLITTING;
THERMOELECTRIC POWER MEASUREMENT;
VARIABLE RANGE HOPPING;
SEMICONDUCTING SILICON;
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EID: 0030262623
PISSN: 00319007
EISSN: 10797114
Source Type: Journal
DOI: 10.1103/PhysRevLett.77.3395 Document Type: Article |
Times cited : (21)
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References (26)
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