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Volumn 77, Issue 16, 1996, Pages 3395-3398

Electronic transport processes in heavily doped uncompensated and compensated silicon as probed by the thermoelectric power

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; PHOSPHORUS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; THERMOELECTRICITY;

EID: 0030262623     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.77.3395     Document Type: Article
Times cited : (21)

References (26)
  • 17
    • 85035213931 scopus 로고
    • Cornell University, Ithaca, NY, (unpublished)PRBMDO
    • U. Thomanschefsky, Ph.D. thesis, Cornell University, Ithaca, NY, 1990 (unpublished). PRBMDO
    • (1990) Ph.D. Thesis
    • Thomanschefsky, U.1
  • 20
    • 0003498043 scopus 로고
    • M. Pollack and B. Shklovskii, North-Holland, Amsterdam
    • I. P. Zvyagin, in Hopping Transport in Solids, M. Pollack and B. Shklovskii (North-Holland, Amsterdam, 1991) p. 143.
    • (1991) Hopping Transport in Solids , pp. 143
    • Zvyagin, I.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.