Weak-field Hall resistance and effective carrier density measurements across the metal-insulator transition in Si-MOS structures

JETP Letters

Volumn 70, Issue 1, 1999, Pages 48-53

  Pudalov, V M ^a   Brunthaler, G ^b   Prinz, A ^b   Bauer, G ^b  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002780881     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.568128     Document Type: Article

References (22)

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