Formation of Si-Si bonds and precipitation of Si nanocrystals in vacuum-ultraviolet-irradiated a-SiO2 films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 649-658

  Akazawa, Housei ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; FILM GROWTH; PHASE SEPARATION; SILICA; SILICON WAFERS; THICKNESS MEASUREMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

SPECTROSCOPIC ELLIPSOMETRY (SE);

NANOSTRUCTURED MATERIALS;

EID: 0035326265     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1368674     Document Type: Conference Paper

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