X-ray emission spectroscopic studies of silicon precipitation in surface layer of SiO 2 induced by argon excimer laser irradiation

Applied Surface Science

Volumn 126, Issue 1-2, 1998, Pages 83-91

  Kurosawa, K ^a,b   Herman, P R ^b   Kurmaev, E Z ^c   Shamin, S N ^c   Galakhov, V R ^c   Takigawa, Y ^d   Yokotani, A ^a   Kameyama, A ^a   Sasaki, W ^a  

^a UNIVERSITY OF MIYAZAKI   (Japan)

^b UNIVERSITY OF TORONTO   (Canada)

^c INSTITUTE OF METAL PHYSICS   (Russian Federation)

^d OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL BONDS; ELECTRON BEAMS; ELECTRON TRANSITIONS; EXCIMER LASERS; LASER BEAM EFFECTS; PHOTONS; PRECIPITATION (CHEMICAL); SILICON;

GLASS FILMS; X RAY EMISSION SPECTROSCOPY;

FUSED SILICA;

EID: 0032046545     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00586-2     Document Type: Article

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