Schottky barrier height in metal-SiC contact - New approach to modelling

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 809-812

  Ivanov, P A ^a   Ignat'ev, K I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Interface Traps; Modelling; Schottky Barrier

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC CONTACTS; ENERGY GAP; OXIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE;

ELECTRON TRAPS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 11644262455     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.809     Document Type: Article

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