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Volumn 82, Issue 11, 1997, Pages 5352-5359

Spatial resolution of localized photoluminescence by near-field scanning optical microscopy

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CALCULATIONS; MATHEMATICAL MODELS; NUMERICAL METHODS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031354440     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366303     Document Type: Article
Times cited : (10)

References (18)
  • 15
    • 0004242004 scopus 로고
    • INSPEC, The Institute of Electrical Engineers, New York
    • Properties of Gallium Arsenide (INSPEC, The Institute of Electrical Engineers, New York, 1986).
    • (1986) Properties of Gallium Arsenide


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.