A reliability comparison of RTO and furnace thin SiO2 layers: Effect of the oxidation temperature

Microelectronic Engineering

Volumn 40, Issue 2, 1998, Pages 61-75

  Fonseca, L ^a   Campabadal, F ^a   Garrido, B ^b   Samitier, J ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; RELAXATION PROCESSES; RELIABILITY; SILICA; THERMAL EFFECTS; THERMAL GRADIENTS; THERMOOXIDATION;

LOW TEMPERATURE OXIDATION; MECHANICAL STRESS LEVELS; OXYGEN DILUTED OXIDATION; RAPID THERMAL OXIDATION; VISCOELASTIC RELAXATION;

SEMICONDUCTING FILMS;

EID: 0032119910     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00194-9     Document Type: Article

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