Numerical investigation on plasma and poly-Si etching uniformity control over a large area in a resonant inductively coupled plasma source

Physics of Plasmas

Volumn 8, Issue 4, 2001, Pages 1384-1394

  Kim, S S ^a,d   Hamaguchi, S ^a   Yoon, N S ^b   Chang, C S ^c   Lee, Y D ^c   Ku, S H ^c  

^a KYOTO UNIVERSITY   (Japan)

^b Chungbuk National University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035309495     PISSN: 1070664X     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1350671     Document Type: Article

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