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Semiconductor Science and Technology

Volumn 16, Issue 4, 2001, Pages 263-272

Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 μm wavelength range

(5) Corbin, E a Shaw, M J a Kitchin, M R a Hagon, J P a Jaros, M a

a NEWCASTLE UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; COMPOSITION; ENERGY GAP; INFRARED DETECTORS; INTERFACES (MATERIALS); LIGHT ABSORPTION; MICROSCOPIC EXAMINATION; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

AUGER RECOMBINATION LIMIT; GALLIUM INDIUM ANTIMONY; INDIUM ARSENIDE; MICROSCOPIC INTERFACE BONDING; SUPERLATTICE STRUCTURES;

SEMICONDUCTOR SUPERLATTICES;

EID: 0035309414 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/4/314 Document Type: Article

Times cited : (17)

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