Auger recombination in strained SixGe1 - X/Si superlattices

Physica B: Condensed Matter

Volumn 254, Issue 3-4, 1998, Pages 240-248

  Williams, C J ^a   Corbin, E ^a   Jaros, M ^a   Herbert, D C ^a,b  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b DERA   (United Kingdom)

Author keywords

Non radiative recombination; SiGe quantum wells

Indexed keywords

BAND STRUCTURE; LATTICE CONSTANTS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

AUGER RECOMBINATION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032476276     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(98)00444-X     Document Type: Article

References (29)

1. R.P.G. Karunasiri, J.S. Park, K.L. Wang, Appl. Phys. Lett. 61 (1992) 2434.
2. F.H. Julien, Z. Moussa, P. Boucaud, Y. Lavon, A. Saar, Superlattices and Microstructures 19 (1996) 69.
3. P. People, J.C. Bean, C.G. Bethea, S.K. Sputz, L.J. Peticolas, Appl. Phys. Lett. 61 (1992) 1122.
4. C.G. Van de Walle, R.M. Martin, Phys. Rev. B 34 (1986) 5621.
5. K.L. Vodopyanov, H. Grainer, C.C. Phillips, R.A. Stradling, A.G. Norman, Y.B. Li, L. Hart, Semicond. Sci. Technol. 10 (1995) 1117.
6. T. Ashley, A.B. Dean, C.T. Elliot, A.D. Johnson et al., Semiconductor Sci. Technol. 8 (1993) 386; Appl. Phys. Lett. 64 (1994) 2433.
7. T. Ashley, A.B. Dean, C.T. Elliot, A.D. Johnson et al., Semiconductor Sci. Technol. 8 (1993) 386; Appl. Phys. Lett. 64 (1994) 2433.
8. C.M. Ciesla, B.M. Murdin, C.R. Pidgeion et al., J. Appl. Phys. 80 (1996) 2994.
9. R.H. Miles, J.N. Schulman, D.H. Chow, T.C. McGill, Semiconductor Sci. Technol. 8 (1993) 102.
10. E.R. Youngdale, J.R. Meyer, C.A. Hoffman, F.J. Bartol et al., Appl. Phys. Lett. 64 (1994) 3160.
11. M. Jaros, K.B. Wong, M.A. Gell, Phys. Rev. B. 31 (1985) 1205.
12. E. Corbin, K.B. Wong, M. Jaros, Phys. Rev. B 50 (1994) 2339.
13. P. Friedel, M.S. Hybertsen, M. Schlüter, Phys. Rev. B 39 (1988) 7974.
14. J.I. Malin, J.R. Meyer, C.L. Felix et al., Appl. Phys. Lett. 70 (1997) 601.
15. J.S. Park, R.P.G. Karunasiri, K.L. Wang, Appl. Phys. Lett. 61 (1992) 681.
16. S. Seki, W.W. Lui, K. Yokoyama, Appl. Phys. Lett. 66 (1995) 3093.
17. A.D. Andreev, G.G. Zegrya, Appl. Phys. Lett. 68 (1996) 2976.
18. C.H. Grein, P.M. Young, H. Ehrenreich, Appl. Phys. Lett. 61 (1992) 2905.
19. E. Corbin, C.J. Williams, J.P. Hagon, M. Jaros, H. Presting, Thin Solid Films 294 (1997) 186.
20. E. Corbin, M. Cusack, K.B. Wong, M. Jaros, Superlattices and Microstructures 16 (1994) 349.
21. J.L. Pan, Phys. Rev. B 46 (1992) 3977.
22. P.T. Landsberg, Recombination in Semiconductors, Cambridge Univ. Press, Cambridge, 1991.
23. H. Nara, A. Morita, J. Phys. Soc. Japan 21 (1966) 1852.
24. A.R. Adams, Electron. Lett. 22 (1986) 249.
25. E. Yablonovitch, E.O. Kane, IEEE J. Lightwave Technol. 4 (1986) 504.
26. E. Dekel, E. Ehrenfreund, D. Gershoni, P. Boucaud, I. Sagnes, Y. Campidelli, Phys. Rev. B 56 (1997) 15734.
27. A. Haug, Semiconductor Sci. Technol. 7 (1992) 1337.
28. Perng-fei Yuh, K.L. Wang, Phys. Rev. B. 37 (1988) 1328.
29. M. Takeshima, J. Appl. Phys. 43 (1972) 4114.