Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrates

Journal of Crystal Growth

Volumn 224, Issue 1-2, 2001, Pages 5-10

  Wang, T ^a,b   Bai, J ^a   Sakai, S ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b Nitride Semiconductors Co Ltd   (Japan)

Author keywords

A1. Doping; A1. Etching; A2. Growth from vapor; B1. Nitrides; B3. Laser diodes; B3. Light emitting diodes

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SUBSTRATES;

INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035308446     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00748-5     Document Type: Article

References (13)