Localized luminescence centers of InGaN

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 52-56

  Kanie, H ^a   Tsukamoto, N ^a   Koami, H ^a   Kawano, T ^a   Totsuka, T ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Cluster; Concentration fluctuation; InGaN; Isoelectronic trap; Localized exciton; Nitridation

Indexed keywords

ENERGY GAP; EXCITONS; LOW TEMPERATURE EFFECTS; NITRIDES; NITRIDING; PHOTOLUMINESCENCE;

CONCENTRATION FLUCTUATION; ISOELECTRONIC TRAP;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032094527     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00155-9     Document Type: Article

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