1/f noise characterization of Ir/p-Si and Wp-Si1-xGex low Schottky barrier junctions

Applied Physics Letters

Volumn 69, Issue 16, 1996, Pages 2382-2384

  Ouacha, H ^a   Nur, O ^a   Willander, M ^a   Fu, Y ^a   Ouacha, A ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001674922     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117644     Document Type: Article

References (15)

1. Silicon-Based Millimeter-Wave Devices, edited by J. F. Luy and P. Russer (Springer, Berlin, 1994), p. 131.
2. M-Y Luo, G. Bosman, A. Van der Ziel, and L. L. Hench, IEEE Trans. Electron Devices ED-35, 1351 (1988).
3. S. T. Hsu, IEEE Trans. Electron Devices ED-18, 882 (1971).
4. H. H. Güttler and J. H. Werner, Appl. Phys. Lett. 56, 1113 (1990).
5. O. Nur, M. R. Sardela, Jr., M. Willander, and R. Turan, Semicond. Sci. Technol. 10, 551 (1995).
6. A. Ouacha, M. Willander, H. Brugger, and U. Meiners, J. Appl. Phys. 77, 6026 (1995).
7. Y. Fu, S. C. Jain, M. Willander, and J. J. Loferski, J. Appl. Phys. 74, 402 (1993).
8. H. Brooks and L. Herring, Phys. Rev. 83, 879 (1951).
9. G. L. Bir and G. E. Pikus, Sov. Phys. Solid State 2, 2039 (1960).
10. K. Takeda, A. Taguchi, and M. Sakat, J. Phys. C. Solid-State Phys. 16, 2237 (1983).
11. x alloy," Phys. Rev. B (accepted).
12. G. S. Kousik, C. M. Van Vliet, G. Bosman, and P. H. Handel, Adv. Phys. Rev. B 38, 13 150 (1988).
13. U. Rau, H. H. Güttler, and J. H. Werner, Mater. Res. Soc. Symp. Proc. 260, 305 (1992).
14. D. Donoval, M. Barus, and M. Zdimal, Solid-State Electron. 34, 1365 (1991).
15. V. W. L. Chin, M. A. Green, and J. W. V. Storey, Solid-State Electron. 36, 1107 (1993).