Noise in 6H-SiC ion implanted p-n diodes: Effect of the active area on the noise properties of these junctions

Journal of Applied Physics

Volumn 85, Issue 9, 1999, Pages 6557-6562

  Ouacha, H ^a   Willander, M ^a   Wahab, Q ^b   Ouacha, A ^c   Holmen G ^d  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^d CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; ELECTRIC SPACE CHARGE; ELECTRON SCATTERING; ELECTRON TRANSITIONS; ELECTRON TRAPS; HOLE TRAPS; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SIGNAL NOISE MEASUREMENT; SILICON CARBIDE;

RECOMBINATION-GENERATION NOISE;

SEMICONDUCTOR DIODES;

EID: 0032621724     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370161     Document Type: Article

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