A model for wafer scale variation of removal rate in chemical mechanical polishing based on elastic pad deformation

Journal of Electronic Materials

Volumn 30, Issue 4, 2001, Pages 400-408

  Fu, Guanghui ^a   Chandra, Abhijit ^a  

^a Iowa State University of Science and Technology   (United States)

Author keywords

CMP; Pressure distribution; Wafer scale

Indexed keywords

CHEMICAL MECHANICAL POLISHING; DEFORMATION; FINITE ELEMENT METHOD; INTERFACES (MATERIALS); PRESSURE EFFECTS; REMOVAL;

ELASTIC PAD DEFORMATION; WAFER NON-UNIFORMITY (WNU);

WSI CIRCUITS;

EID: 0035306542     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0051-x     Document Type: Article

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