The role of (4 x 3) surface reconstruction induced by in adsorption for the heteroepitaxial growth of InSb on Si(001)-2 X 1 surface

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 101-106

  Li, D M ^a   Atoji, M ^a   Yamazaki, M ^a   Okamoto, T ^a   Tambo, T ^a   Tatsuyama, C ^a  

^a UNIVERSITY OF TOYAMA   (Japan)

Author keywords

Heteroepitaxy; In(4 x 3); InSb; Si(001) 2 x 1; STM

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; INDIUM; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE STRUCTURE; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

HETEROEPITAXY; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 0032096914     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00033-6     Document Type: Article

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