Layer splitting by H-ion implantation in silicon: Lower limit on layer thickness?

Materials Research Society Symposium - Proceedings

Volumn 585, Issue , 2000, Pages 177-182

  Qian, C ^a   Terreault, B ^a  

^a INRS EMT   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; HYDROGEN; ION IMPLANTATION; SCANNING ELECTRON MICROSCOPY; SILICON ON INSULATOR TECHNOLOGY;

LAYER SPLITTING; SMART-CUT PROCESSES;

SEMICONDUCTING SILICON;

EID: 0034507145     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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