Thermal nitridation and oxygen-induced etching reactions: A comparative study on Si(100) and (111) surfaces by scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2429-2434

  Jeong Sook Ha, ^a   Park, K H ^a   Wan Soo Yun, ^a   Ko, Y J ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Etching; Nitridation; Si(100); Si(111); Silicon nano structure

Indexed keywords

ETCHING; LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; PARTIAL PRESSURE; SCANNING TUNNELING MICROSCOPY; SILICON NITRIDE;

THERMAL NITRIDATION;

SEMICONDUCTING SILICON;

EID: 0035302401     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2429     Document Type: Article

References (23)