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Volumn 40, Issue 4 A, 2001, Pages 2440-2446
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Enhancement of etch rate by the addition of O2 and Ar in chemical dry etching of Si using a discharge flow of Ar/CF4 and CF4/O4 gas mixtures
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Author keywords
Ar; CF4; Chemical dry etching; Discharge flow; Microwave discharge; O2; Si
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Indexed keywords
DISCHARGE (FLUID MECHANICS);
DRY ETCHING;
ELECTRON EMISSION;
EMISSION SPECTROSCOPY;
MICROWAVES;
OXYGEN;
CHEMICAL DRY ETCHING;
SILICON;
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EID: 0035301913
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.2440 Document Type: Article |
Times cited : (2)
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References (34)
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