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Volumn 40, Issue 4 A, 2001, Pages 2440-2446

Enhancement of etch rate by the addition of O2 and Ar in chemical dry etching of Si using a discharge flow of Ar/CF4 and CF4/O4 gas mixtures

Author keywords

Ar; CF4; Chemical dry etching; Discharge flow; Microwave discharge; O2; Si

Indexed keywords

DISCHARGE (FLUID MECHANICS); DRY ETCHING; ELECTRON EMISSION; EMISSION SPECTROSCOPY; MICROWAVES; OXYGEN;

EID: 0035301913     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2440     Document Type: Article
Times cited : (2)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.