Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175, Issue 177, 2001, Pages 324-330

  Lindner, J K N ^a   Wenzel, S ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Cavities; Ion beam synthesis; Metallization; Mo; SiC; Silicides; Ti

Indexed keywords

ETCHING; ION IMPLANTATION; METALLIZING; MOLYBDENUM; SEMICONDUCTING SILICON; SILICON CARBIDE; SUBSTRATES; SYNTHESIS (CHEMICAL); TITANIUM;

ION BEAM SYNTHESIS;

SEMICONDUCTING FILMS;

EID: 0035301879     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00593-0     Document Type: Article

References (14)