Conductive tungsten-based layers synthesized by ion implantation into 6H-silicon carbide

Materials Research Society Symposium - Proceedings

Volumn 439, Issue , 1997, Pages 179-184

  Weishart, H ^a   Schoeneich, J ^a   Voelskow, M ^a   Skorupa, W ^a  

^a Materialforschung   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL); TUNGSTEN;

IMPLANTATION INDUCED DAMAGES; OSTWALD RIPENING;

SILICON CARBIDE;

EID: 0030710789     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)