Mechanism of void formation in the growth of 3C-SiC thin film in Si substrate

Materials Science Forum

Volumn 264-268, Issue pt 1, 1998, Pages 199-202

  Seo, Y H ^a   Kim, K C ^a   Shim, H W ^a   Nahm, K S ^a   Suh, E K ^a   Lee, H J ^a   Hwang, Y G ^a   Kim, D K ^a   Lee, B T ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

VOID FORMATION MECHANISM;

SILICON CARBIDE;

EID: 0031700478     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)