High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 715-720

  Ueda, M ^a   Reuther, H ^b   Gunzel, R ^b   Beloto, A F ^a   Abramof, E ^a   Berni, L A ^a  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Plasma immersion ion implantation; Silicon carbide; Silicon nitride

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; PLASMA SOURCES; SEMICONDUCTOR DOPING; STRESS ANALYSIS; X RAY DIFFRACTION ANALYSIS;

PLASMA IMMERSION ION IMPLANTATION;

SILICON WAFERS;

EID: 0035301855     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00555-3     Document Type: Conference Paper

References (14)