Influence of erbium ion implantation dose on characteristics of (111) Si:(Er, O) light-emitting diodes operating in p-n-junction breakdown mode

Semiconductors

Volumn 34, Issue 9, 2000, Pages 1027-1030

  Sobolev, N A ^a   Emel'yanov, A M ^a   Nikolaev, Yu A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034258499     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1309417     Document Type: Article

References (13)

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