Tunnel light-emitting Si:(Er,O) diodes with a short rise time of Er3+ electroluminescence under breakdown conditions

Semiconductors

Volumn 34, Issue 8, 2000, Pages 927-930

  Emel'yanov, A M ^a   Sobolev, N A ^a   Trishenkov, M A ^b   Khakuashev, P E ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Federal State Unitary Enterprise   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034238816     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1188102     Document Type: Article

References (11)

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