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Applied Physics Letters

Volumn 71, Issue 14, 1997, Pages 1930-1932

Avalanche breakdown-related electroluminescence in sinale crystal Si:Er:O

(3) Sobolev, N A a Emel'yanov, A M b Shtel'makh, K F b

a IOFFE INSTITUTE (Russian Federation)

b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ERBIUM; FABRICATION; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SINGLE CRYSTALS;

AVALANCHE BREAKDOWN; CAPACITANCE VOLTAGE MEASUREMENT;

LIGHT EMITTING DIODES;

EID: 0031556443 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.119984 Document Type: Article

Times cited : (35)

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