Fabrication of 4H-SiC merged PN-Schottky diodes

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 22, Issue 3, 2001, Pages 265-270

  Zhang, Y M ^a   Alexandrov, P ^a   Zhao, J H ^a  

^a XI'AN UNIVERSITY   (China)

Author keywords

Power devices; Semiconductor diode; Silicon carbide

Indexed keywords

ION IMPLANTATION; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

POWER DEVICE; SCHOTTKY CONTACT;

SCHOTTKY BARRIER DIODES;

EID: 0035284383     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

1. Sic power devices
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9. High-field and high-temperature transport in n-type 3C-SiC
10. 6H-SiC high voltage schottky barrier diodes