Effect of argon ion bombardment on formation of 6H-SiC prepared by annealing of RF sputtering a-SiC:H film

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 19, Issue 8, 1998, Pages 569-573

  Wang, Huiyao ^a   Wang, Yinyue ^a   Song, Qing ^a   Wang, Tianmin ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ION BOMBARDMENT; SPUTTERING;

RAMAN SCATTERING; SILICON CARBIDE FILM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032266323     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)