Proton trapping and diffusion in SiO2 thin films: A first-principles study

Applied Surface Science

Volumn 172, Issue 1-2, 2001, Pages 41-46

  Zhang, Qiming ^a   Tang, Shaoping ^b   Wallace, Robert M ^c  

^a UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^b Silicon Technol Devmt Texas I   (United States)

^c Center for Advanced Research and Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BINDING ENERGY; BOND STRENGTH (CHEMICAL); COMPUTATIONAL METHODS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); NONVOLATILE STORAGE; PROTONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICA; THIN FILMS;

DENSITY FUNCTIONAL THEORY; OXIDE SEMICONDUCTOR INTERFACES;

SEMICONDUCTING FILMS;

EID: 0035282145     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00839-4     Document Type: Article

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