Geiger-mode avalanche photodiode arrays integrated with CMOS timing circuits

Annual Device Research Conference Digest

Volumn , Issue , 1998, Pages 58-59

  Aull, B F ^a   Loomis, A H ^a   Gregory, J A ^a   Young, D J ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ION IMPLANTATION; PHOTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TIMING CIRCUITS;

AVALANCHE CURRENT; AVALANCHE PHOTODIODE; BREAKDOWN VOLTAGE; GEIGER MODE;

PHOTODIODES;

EID: 0032307634     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)