Computer design and analysis of relaxation oscillator circuits applying unijunction transistors

Microelectronics Journal

Volumn 28, Issue 6-7, 1997, Pages 609-616

  Soliman, F A S ^a   Kamh, S A ^b   Al Esawey, F ^c   El Senosi, U A ^a  

^a NUCLEAR MATERIALS AUTHORITY   (Egypt)

^b AIN SHAMS UNIVERSITY   (Egypt)

^c MENOUFIA UNIVERSITY   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005299539     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00153-x     Document Type: Article

References (12)

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3. K. Gopala and M. Pramod, Noise spectral density measurements in a low current unijunction transistor. Ind. J. Phys., 66(5) (1992) 687-690.
4. S.L. Agrawal and I.B. Singh, Microprocessor based magnetic fluxmeter using unijunction transistor probe. J. Inst. Electron. Telecommun. Eng., 34(2) (1993) 91-95.
5. B.B. Mitchell, Semiconductor Pulse Circuits with Experiments, Holt, Rinehart and Winston, New York, 1970.
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7. F.A.S. Soliman, Theoretical analysis of radiation effects on silicon power diodes Isotopenpraxis, 25(9) (1988) 353-359.
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9. F.A.S. Soliman and S.A. Kamh, Radiation damage in negative differential resistance devices. J. Mater. Sci.: Mater. Electron., UK, 5(1) (1994) 30-34.
10. S.A. Kamh, F.A.S. Soliman and U. El-senosi, Relaxation oscillators: design, characterization, modeling and radiation effects, Conf. Information and Systems Methods Applied to Engineering Problems, Manama, Bahrain, Association for Advancement of Modeling and Simulation Techniques in Enterprise; France, April 1994, Vol. 1, pp. 131-144.
11. W.A. Andersson, Comparing radiation effects in Gunn and IMATT diodes. IEEE Trans. Nucl. Sci., N5-18 (1971) 404-409.
12. F.A.S. Soliman, H. El-Hennawy and K. Marzouk, Operation of microwave Gunn devices under the influence of nuclear radiation. J. Appl. Radiat. Isot., 45(12) (1994) 1129-1135.