Low temperature oxidation processing with high purity ozone

Materials Research Society Symposium - Proceedings

Volumn 429, Issue , 1996, Pages 269-274

  Kurokawa, A ^a   Ichimura, S ^a   Kang, H J ^a   Moon, D W ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; INTERFACES (MATERIALS); OXYGEN; OZONE; PASSIVATION; SEMICONDUCTOR DEVICES; SILICA; SILICON; SURFACES; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH PURITY OZONE; LOW TEMPERATURE OXIDATION PROCESSING; OXIDE FORMATION; SUBOXIDES; THERMAL OXIDATION;

OXIDATION;

EID: 0030409085     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-429-269     Document Type: Conference Paper

References (12)